S-Litho represents advanced lithography simulation for semiconductor device manufacturing process development and optimization. It covers a wide range of applications in proximity printing, optical, immersion, extreme ultraviolet (EUV), and electron beam (e-beam) lithography. Process-limiting effects within the imaging system of an exposure tool can be thoroughly analyzed, taking the impact of mask and substrate topography on photoresist patterning into account. Interfacing S-Litho with Synopsys TCAD tools allows a seamless modeling of complex integration techniques such as double-patterning. The link between S-Litho and Synopsys Proteus mask synthesis applications accelerates the generation and validation of optical proximity correction (OPC) models and improves process robustness.
Synopsys S-Litho 2024.06 Win/Linux64 Tested Picture
S-Litho provides a comprehensive set of features to predict the outcome of a photolithographic process. Physics-based models enable high simulation accuracy. As a computational lithography tool, S-Litho accelerates process development and reduces cost by eliminating experiments.
Key features include:
- Wide range of lithographic techniques: Proximity printing, e-beam direct write, DUV projection lithography
- Resist modeling in three dimensions (3D)
- Resist model calibration environment
- Powerful customization through scripting
- Links to Synopsys’ Proteus and TCAD solutions
